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1

Complementary Black Phosphorus Tunneling Field-Effect Transistors

Wu, Peng, Ameen, Tarek, Zhang, Huairuo, Bendersky, Leonid A., Ilatikhameneh, Hesameddin, Klimeck, Gerhard, Rahman, Rajib, Davydov, Albert V., Appenzeller, Joerg

Journal:

Year:

2018

Language:

english

File:

PDF, 1.05 MB

english, 2018

2

Coulomb drag between in-plane graphene double ribbons and the impact of the dielectric constant

Chen, Hongyan, Appenzeller, Joerg

Journal:

Year:

2013

Language:

english

File:

PDF, 1.08 MB

english, 2013

3

High Performance Multilayer MoS 2 Transistors with Scandium Contacts

Das, Saptarshi, Chen, Hong-Yan, Penumatcha, Ashish Verma, Appenzeller, Joerg

Journal:

Year:

2013

Language:

english

File:

PDF, 978 KB

english, 2013

4

[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - Experimental demonstration of nanomagnet networks as hardware for Ising computing

Debashis, Punyashloka, Faria, Rafatul, Camsari, Kerem Y., Appenzeller, Joerg, Datta, Supriyo, Chen, Zhihong

Year:

2016

Language:

english

File:

PDF, 835 KB

english, 2016

5

[IEEE 2009 67th Annual Device Research Conference (DRC) - University Park, PA, USA (2009.06.22-2009.06.24)] 2009 Device Research Conference - Multi-layer graphene field-effect transistors for improved device performance

Sui, Yang, Appenzeller, Joerg

Year:

2009

Language:

english

File:

PDF, 285 KB

english, 2009

6

Where Does the Current Flow in Two-Dimensional Layered Systems?

Das, Saptarshi, Appenzeller, Joerg

Journal:

Year:

2013

Language:

english

File:

PDF, 3.92 MB

english, 2013

7

[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Mobility extraction and quantum capacitance impact in high performance graphene field-effect transistor devices

Chen, Zhihong, Appenzeller, Joerg

Year:

2008

Language:

english

File:

PDF, 311 KB

english, 2008

8

Spin-torque switching of a nano-magnet using giant spin hall effect

Penumatcha, Ashish V., Das, Suprem R., Chen, Zhihong, Appenzeller, Joerg

Journal:

Year:

2015

Language:

english

File:

PDF, 3.08 MB

english, 2015

9

Screening and Interlayer Coupling in Multilayer Graphene Field-Effect Transistors

Sui, Yang, Appenzeller, Joerg

Journal:

Year:

2009

Language:

english

File:

PDF, 2.44 MB

english, 2009

10

Electric-field induced structural transition in vertical MoTe2- and Mo1–xWxTe2-based resistive memories

Zhang, Feng, Zhang, Huairuo, Krylyuk, Sergiy, Milligan, Cory A., Zhu, Yuqi, Zemlyanov, Dmitry Y., Bendersky, Leonid A., Burton, Benjamin P., Davydov, Albert V., Appenzeller, Joerg

Journal:

Nature Materials

Year:

2019

Language:

english

File:

PDF, 2.59 MB

english, 2019

11

Vertical versus Lateral Two-Dimensional Heterostructures: On the Topic of Atomically Abrupt p/n-Junctions

Zhou, Ruiping, Ostwal, Vaibhav, Appenzeller, Joerg

Journal:

Year:

2017

Language:

english

File:

PDF, 1.98 MB

english, 2017

12

ECS Transactions [ECS 218th ECS Meeting - Las Vegas, NV (October 10 - October 15, 2010)] - Ge/Si Core/Shell Nanowire Structures for Tunneling Devices

Smith, Joshua T., Zhao, Yanjie, Razavieh, Ali, Yang, Chen, Appenzeller, Joerg

Year:

2010

Language:

english

File:

PDF, 761 KB

english, 2010

13

Dielectric Engineered Tunnel Field-Effect Transistor

Ilatikhameneh, Hesameddin, Ameen, Tarek, Klimeck, Gerhard, Appenzeller, Joerg, Rahman, Rajib

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 7.25 MB

english, 2015

14

Exploration of channel width scaling and edge states in transition metal dichalcogenides

Zhang, Feng, Lee, Chia-Hui, Robinson, Joshua A., Appenzeller, Joerg

Journal:

Year:

2017

Language:

english

File:

PDF, 1.39 MB

english, 2017

15

From Charge to Spin and Spin to Charge: Stochastic Magnets for Probabilistic Switching

Camsari, Kerem Y., Debashis, Punyashloka, Ostwal, Vaibhav, Pervaiz, Ahmed Zeeshan, Shen, Tingting, Chen, Zhihong, Datta, Supriyo, Appenzeller, Joerg

Journal:

Proceedings of the IEEE

Year:

2020

File:

PDF, 3.41 MB

2020

16

Ambipolar-to-Unipolar Conversion of Carbon Nanotube Transistors by Gate Structure Engineering

Lin, Yu-Ming, Appenzeller, Joerg, Avouris, Phaedon

Journal:

Year:

2004

Language:

english

File:

PDF, 181 KB

english, 2004

17

Strain Engineering for Transition Metal Dichalcogenides Based Field Effect Transistors

Shen, Tingting, Penumatcha, Ashish Verma, Appenzeller, Joerg

Journal:

Year:

2016

Language:

english

File:

PDF, 1.03 MB

english, 2016

18

Design Rules for High Performance Tunnel Transistors from 2D Materials

Ilatikhameneh, Hesameddin, Klimeck, Gerhard, Appenzeller, Joerg, Rahman, Rajib

Journal:

IEEE Journal of the Electron Devices Society

Year:

2016

Language:

english

File:

PDF, 6.22 MB

english, 2016

19

[IEEE 2011 69th Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2011.06.20-2011.06.22)] 69th Device Research Conference - Complementary-type graphene inverters operating at room-temperature

Chen, Hong-Yan, Appenzeller, Joerg

Year:

2011

Language:

english

File:

PDF, 957 KB

english, 2011

20

FETRAM. An Organic Ferroelectric Material Based Novel Random Access Memory Cell

Das, Saptarshi, Appenzeller, Joerg

Journal:

Year:

2011

Language:

english

File:

PDF, 4.27 MB

english, 2011

21

[IEEE 2009 Proceedings of ESSCIRC (ESSCIRC) - Athens, Greece (2009.09.14-2009.09.18)] 2009 Proceedings of ESSCIRC - Nanowire electronics

Appenzeller, Joerg

Year:

2009

Language:

english

File:

PDF, 728 KB

english, 2009

22

Spin Transfer Torque in a Graphene Lateral Spin Valve Assisted by an External Magnetic Field

Lin, Chia-Ching, Penumatcha, Ashish Verma, Gao, Yunfei, Diep, Vinh Quang, Appenzeller, Joerg, Chen, Zhihong

Journal:

Year:

2013

Language:

english

File:

PDF, 1.33 MB

english, 2013

23

[IEEE 2014 72nd Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2014.6.22-2014.6.25)] 72nd Device Research Conference - Ionic gated WSe2 FETs: Towards transparent Schottky barriers

Prakash, Abhijith, Das, Saptarshi, Mehta, Ruchit, Chen, Zhihong, Appenzeller, Joerg

Year:

2014

Language:

english

File:

PDF, 451 KB

english, 2014

24

Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model

Penumatcha, Ashish V., Salazar, Ramon B., Appenzeller, Joerg

Journal:

Nature Communications

Year:

2015

Language:

english

File:

PDF, 914 KB

english, 2015

25

From Fowler-Nordheim to Nonequilibrium Green's Function Modeling of Tunneling

Ilatikhameneh, Hesameddin, Salazar, Ramon B., Klimeck, Gerhard, Rahman, Rajib, Appenzeller, Joerg

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 1.63 MB

english, 2016

26

[IEEE 2017 75th Device Research Conference (DRC) - South Bend, IN, USA (2017.6.25-2017.6.28)] 2017 75th Annual Device Research Conference (DRC) - Dimensionality matters: Electronic transport in 2D layered materials

Appenzeller, Joerg

Year:

2017

Language:

english

File:

PDF, 107 KB

english, 2017

27

Characterization of Single Defects in Ultrascaled MoS 2 Field-Effect Transistors

Stampfer, Bernhard, Zhang, Feng, Illarionov, Yury Yuryevich, Knobloch, Theresia, Wu, Peng, Waltl, Michael, Grill, Alexander, Appenzeller, Joerg, Grasser, Tibor

Journal:

Year:

2018

Language:

english

File:

PDF, 1.56 MB

english, 2018

28

Properties of Metal–Graphene Contacts

Knoch, Joachim, Chen, Zhihong, Appenzeller, Joerg

Journal:

IEEE Transactions on Nanotechnology

Year:

2012

Language:

english

File:

PDF, 627 KB

english, 2012

29

Low-Frequency Current Fluctuations in Individual Semiconducting Single-Wall Carbon Nanotubes

Lin, Yu-Ming, Appenzeller, Joerg, Knoch, Joachim, Chen, Zhihong, Avouris, Phaedon

Journal:

Year:

2006

Language:

english

File:

PDF, 326 KB

english, 2006

30

Transport Modulation in Ge/Si Core/Shell Nanowires through Controlled Synthesis of Doped Si Shells

Zhao, Yanjie, Smith, Joshua T., Appenzeller, Joerg, Yang, Chen

Journal:

Year:

2011

Language:

english

File:

PDF, 2.57 MB

english, 2011

31

[IEEE 2006 64th Device Research Conference - State College, PA, USA (2006.06.26-2006.06.28)] 2006 64th Device Research Conference - High Performance Carbon Nanotube Ring Oscillator

Chen, Zhihong, Appenzeller, Joerg, Solomon, Paul, Lin, Yu-ming, Avouris, Phaedon

Year:

2006

Language:

english

File:

PDF, 2.15 MB

english, 2006

32

Channel Thickness Optimization for Ultrathin and 2-D Chemically Doped TFETs

Chen, Chin-Yi, Ameen, Tarek A., Ilatikhameneh, Hesameddin, Rahman, Rajib, Klimeck, Gerhard, Appenzeller, Joerg

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 3.89 MB

english, 2018

33

Spin-torque devices with hard axis initialization as Stochastic Binary Neurons

Ostwal, Vaibhav, Debashis, Punyashloka, Faria, Rafatul, Chen, Zhihong, Appenzeller, Joerg

Journal:

Scientific Reports

Year:

2018

Language:

english

File:

PDF, 3.68 MB

english, 2018

34

[IEEE 2019 Device Research Conference (DRC) - Ann Arbor, MI, USA (2019.6.23-2019.6.26)] 2019 Device Research Conference (DRC) - About the interplay between contact and channel resistance in MoS 2 and its impact on mobility extraction

Zhou, Ruiping, Appenzeller, Joerg

Year:

2019

File:

PDF, 881 KB

2019

35

Zhang, M., Knoch, J., Appenzeller, Joerg, Mantl, S.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 323 KB

english, 2007

36

Effect of Diameter Variation on Electrical Characteristics of Schottky Barrier Indium Arsenide Nanowire Field-Effect Transistors

Razavieh, Ali, Mohseni, Parsian Katal, Jung, Kyooho, Mehrotra, Saumitra, Das, Saptarshi, Suslov, Sergey, Li, Xiuling, Klimeck, Gerhard, Janes, David B., Appenzeller, Joerg

Journal:

Year:

2014

Language:

english

File:

PDF, 2.00 MB

english, 2014

37

[IEEE 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Washington DC, USA (2015.9.9-2015.9.11)] 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Electrically doped WTe2 tunnel transistors

Ilatikhameneh, Hesameddin, Rahman, Rajib, Appenzeller, Joerg, Klimeck, Gerhard

Year:

2015

Language:

english

File:

PDF, 1.95 MB

english, 2015

38

Observation of 1D Behavior in Si Nanowires: Toward High-Performance TFETs

Salazar, Ramon B., Mehrotra, Saumitra R., Klimeck, Gerhard, Singh, Navab, Appenzeller, Joerg

Journal:

Year:

2012

Language:

english

File:

PDF, 358 KB

english, 2012

39

Understanding the Impact of Schottky Barriers on the Performance of Narrow Bandgap Nanowire Field Effect Transistors

Zhao, Yanjie, Candebat, Drew, Delker, Collin, Zi, Yunlong, Janes, David, Appenzeller, Joerg, Yang, Chen

Journal:

Year:

2012

Language:

english

File:

PDF, 1.41 MB

english, 2012

40

[IEEE 2012 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2012.12.10-2012.12.13)] 2012 International Electron Devices Meeting - Optimized spin relaxation length in few layer graphene at room temperature

Gao, Yunfei, Kubo, Yuri J., Lin, Chia-Ching, Chen, Zhihong, Appenzeller, Joerg

Year:

2012

Language:

english

File:

PDF, 1.06 MB

english, 2012

41

[IEEE 2009 Proceedings of the European Solid State Device Research Conference (ESSDERC) - Athens, Greece (2009.09.14-2009.09.18)] 2009 Proceedings of the European Solid State Device Research Conference - Nanowire electronics

Appenzeller, Joerg

Year:

2009

Language:

english

File:

PDF, 845 KB

english, 2009

42

Hardware implementation of Bayesian network building blocks with stochastic spintronic devices

Debashis, Punyashloka, Ostwal, Vaibhav, Faria, Rafatul, Datta, Supriyo, Appenzeller, Joerg, Chen, Zhihong

Journal:

Scientific Reports

Year:

2020

File:

PDF, 2.91 MB

2020

43

Utilizing the Unique Properties of Nanowire MOSFETs for RF Applications

Razavieh, Ali, Mehrotra, Saumitra, Singh, Navab, Klimeck, Gerhard, Janes, David, Appenzeller, Joerg

Journal:

Year:

2013

Language:

english

File:

PDF, 322 KB

english, 2013

44

On the Importance of Bandgap Formation in Graphene for Analog Device Applications

Das, Saptarshi, Appenzeller, Joerg

Journal:

IEEE Transactions on Nanotechnology

Year:

2011

Language:

english

File:

PDF, 589 KB

english, 2011

45

[IEEE 2006 64th Device Research Conference - State College, PA, USA (2006.06.26-2006.06.28)] 2006 64th Device Research Conference - Seamless transition from the single-electron regime to field-effect transistor operation of nanoscale Schottky-barrier FETs

Indlekofer, Klaus, Knoch, Joachim, Appenzeller, Joerg

Year:

2006

Language:

english

File:

PDF, 1.98 MB

english, 2006

46

Vertical charge transport through transition metal dichalcogenides – a quantitative analysis

Zhu, Yuqi, Zhou, Ruiping, Zhang, Feng, Appenzeller, Joerg

Journal:

Year:

2017

Language:

english

File:

PDF, 1.65 MB

english, 2017

47

Externally Assembled Gate-All-Around Carbon Nanotube Field-Effect Transistor

Chen, Zhihong, Farmer, Damon, Xu, Sheng, Gordon, Roy, Avouris, Phaedon, Appenzeller, Joerg

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 452 KB

english, 2008

48

[IEEE 2010 68th Annual Device Research Conference (DRC) - Notre Dame, IN, USA (2010.06.21-2010.06.23)] 68th Device Research Conference - Effects of nanoscale contacts to silicon nanowires on contact resistance: Characterization and Modeling

Smith, Joshua T., Zhao, Yanjie, Yang, Chen, Appenzeller, Joerg

Year:

2010

Language:

english

File:

PDF, 714 KB

english, 2010

49

Cover Picture: Screening and interlayer coupling in multilayer MoS 2 (Phys. Status Solidi RRL 4/2013)

Das, Saptarshi, Appenzeller, Joerg

Journal:

physica status solidi (RRL) - Rapid Research Letters

Year:

2013

File:

PDF, 256 KB

2013

50

Screening and interlayer coupling in multilayer MoS 2

Das, Saptarshi, Appenzeller, Joerg

Journal:

physica status solidi (RRL) - Rapid Research Letters

Year:

2013

Language:

english

File:

PDF, 599 KB

english, 2013

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